Heterostructure bipolar transistors and integrated circuits

Pentacene integrated thin-film transistors and circuits

Displacement Damage in Bipolar Linear Integrated Circuits

The effects of proton and gamma radiation are compared for several types of integrated circuits with complex internal design and failure modes that are not as straightforward as the input bias current mechanism that is frequently used to study damage effects in linear devices. New circuit failure mechanisms were observed in voltage regulators that cause them to fail at much lower levels when th...

High Temperature Bipolar SiC Power Integrated Circuits

In the recent decade, integrated electronics implemented using wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme environments (e.g high-temperature and high radiation). Such electronics have applications in down-hole drilling, automobile-, airand spaceindustries. In this thesis, integrated circuits ...

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...

Transconouctor and Integrator Circuits for Integrated Bipolar Video Frequency Filters

This paper describes novel transconductor and an integrator circuits which can be used in integrated video frequency filters in bipolar technology. The transconductor consists of a parallel connection of a passive nominal transconductance and an active variable transconductance, resulting in good high frequency performance up to 70 MHz and less than 1% linearity error for input signals up to 2V...